Characterization of <scp>AlGaN</scp>/<scp>GaN</scp> based <scp>HEMT</scp> for low noise and high frequency application
Shashank Kumar Dubey, Meena Mishra, Aminul Islam
2021International Journal of Numerical Modelling Electronic Networks Devices and Fields31 citationsDOI
Abstract
Abstract This article presents a detailed study on AlGaN/GaN based HEMT for DC (such as I D − V DS , I D − V GS and g m ), RF (such as cut off frequency, f T and maximum oscillation frequency, f MAX ) and noise parameters (such as minimum noise figure ( NF min ), noise resistance ( R n ) and optimum reflection coefficient ( Г opt )). AlGaN/GaN based HEMT having gate length 250 nm and 500 nm have been simulated and verified on the Silvaco TCAD tool.
Topics & Concepts
High-electron-mobility transistorNoise (video)Oscillation (cell signaling)Noise figureMaterials scienceOptoelectronicsElectrical engineeringTransistorComputer scienceChemistryEngineeringAmplifierCMOSVoltageImage (mathematics)Artificial intelligenceBiochemistryGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignSemiconductor materials and devices