Revealing the relationship between photoelectrochemical performance and interface hole trapping in CuBi<sub>2</sub>O<sub>4</sub> heterojunction photoelectrodes
Angang Song, Igal Levine, Roel van de Krol, Thomas Dittrich, Sean P. Berglund
Abstract
CdS, BiVO<sub>4</sub>, and Ga<sub>2</sub>O<sub>3</sub> buffer layers were tested between CuBi<sub>2</sub>O<sub>4</sub> and TiO<sub>2</sub> in heterojunction photoelectrodes. Photoelectrochemical analysis and modulated surface photovoltage spectroscopy revealed that interface hole traps impacted device performance.
Topics & Concepts
HeterojunctionTrappingInterface (matter)Photoelectrochemical cellOptoelectronicsMaterials sciencePhotoelectrochemistryChemical physicsChemistryPhysical chemistryElectrochemistryBiologyElectrodeEcologyCapillary numberElectrolyteComposite materialCapillary actionCopper-based nanomaterials and applicationsElectronic and Structural Properties of OxidesGas Sensing Nanomaterials and Sensors