Electric-Field Control of Spin Polarization above Room Temperature in Single-Layer A-Type Antiferromagnetic Semiconductor
Yijie Niu, Haifeng Lv, Xiaojun Wu, Jinlong Yang
Abstract
Two-dimensional (2D) antiferromagnets have drawn great interest for absence of stray fields in antiferromagnetic (AFM) spintronics. However, it remains challenging to manipulate their spin polarization above room temperature for practical applications. Herein, a general strategy is reported to realize the control of spin polarization above room temperature in 2D A-type AFM semiconductors by external electric field based on first-principles calculations, exemplified by transition metal monohalide MnCl and carbide MXenes Cr 2 CX 2 (X = F, Cl, OH). It shows that 100% spin polarization can be induced around Fermi level with spin splitting gap related to the spatial distribution of spin density in real space. Meanwhile, the Neél temperature of 2D MnCl and Cr 2 CF 2 remains above room temperature under external electric field up to 0.6 V/Å. This study exhibits the potential for application of 2D AFM semiconductors in electric-field-controlled spintronics.