Water-induced dual ultrahigh mobilities over 400 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> in 2D MoS<sub>2</sub> transistors for ultralow-voltage operation and photoelectric synapse perception
Dingdong Xie, Liubo Wei, Ziqing Wei, Jun He, Jie Jiang
Abstract
A facile and effective strategy to significantly enhance the field-effect mobility over 400 cm 2 V −1 s −1 is proposed by capping the water molecules on the 2D MoS 2 surface of transistors, which can be used to achieve some intriguing synapse behaviors.
Topics & Concepts
Materials scienceTransistorPhotoelectric effectField-effect transistorOptoelectronicsElectron mobilityAtomic physicsVoltageElectrical engineeringPhysicsEngineering2D Materials and ApplicationsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices