Directly measuring the structural transition pathways of strain-engineered VO<sub>2</sub> thin films
Egor Evlyukhin, Sebastian A. Howard, Hanjong Paik, Galo J. Páez Fajardo, David J. Gosztola, Christopher N. Singh, Darrell G. Schlom, Wei‐Cheng Lee, Louis F. J. Piper
Abstract
The interplay between epitaxial strains and structural transition pathways as well as local environment along the metal-to-insulator transition in VO<sub>2</sub>/MgF<sub>2</sub> (001) and (110) thin films is investigated.
Topics & Concepts
Materials scienceThin filmTransition metalStrain (injury)EpitaxyMetal–insulator transitionStructural changeChemical physicsCrystallographyNanotechnologyCondensed matter physicsMetalChemistryCatalysisMetallurgyPhysicsEconomicsInternal medicineMedicineLayer (electronics)MacroeconomicsBiochemistryTransition Metal Oxide NanomaterialsGa2O3 and related materialsZnO doping and properties