Litcius/Paper detail

Au–InSe van der Waals Schottky junctions with ultralow reverse current and high photosensitivity

Siqi Hu, Qiao Zhang, Xiaoguang Luo, Xutao Zhang, Tao Wang, Yingchun Cheng, Wanqi Jie, Jianlin Zhao, Ting Mei, Xuetao Gan

2020Nanoscale44 citationsDOI

Abstract

. The work offers an idea for investigating electronic and optoelectronic devices with high signal-to-noise ratios based on vdW Schottky junctions.

Topics & Concepts

OptoelectronicsSchottky barrierMaterials scienceSchottky diodeThermionic emissionPhotodetectorvan der Waals forceRectificationResponsivityOhmic contactSemiconductorNanotechnologyChemistryElectronPhysicsDiodeLayer (electronics)MoleculeQuantum mechanicsOrganic chemistryPower (physics)2D Materials and ApplicationsTopological Materials and PhenomenaMXene and MAX Phase Materials
Au–InSe van der Waals Schottky junctions with ultralow reverse current and high photosensitivity | Litcius