Anti-Reflection Properties of Black Silicon Coated with Thin Films of Metal Oxides by Atomic Layer Deposition
Gagik Ayvazyan, М. В. Катков, М. С. Лебедев, Vladimir R. Shayapov, Mikhail Yu. Afonin, D. E. Petukhova, Irina V. Yushina, Е. А. Максимовский, Arthur Aghabekyan
Abstract
The results of experimental studies of the anti-reflection properties of black silicon (b-Si) layers coated with thin films of TiO2, HfO2, and Sc2O3 metal oxides by atomic layer deposition (ALD) are presented. An improvement in the antireflection properties of b-Si in a wide spectral range is shown. It is expedient to use the investigated ALD films in solar cells as an effective passivating coating of the b-Si surface.
Topics & Concepts
Atomic layer depositionMaterials scienceSiliconLayer (electronics)Reflection (computer programming)MetalDeposition (geology)Thin filmBlack siliconCoatingOptoelectronicsNanotechnologyMetallurgyProgramming languageComputer scienceBiologySedimentPaleontologySilicon and Solar Cell TechnologiesThin-Film Transistor TechnologiesSilicon Nanostructures and Photoluminescence