Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology
Andrew M. Tonigan, Dennis R. Ball, György Vizkelethy, Jeffrey D. Black, Dolores Black, James M. Trippe, Edward S. Bielejec, Michael L. Alles, Robert A. Reed, Ronald D. Schrimpf
Abstract
Semiconductor-insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> cm/s.