Reducing the reverse leakage current of AlGaN/GaN heterostructures <i>via</i> low-fluence neutron irradiation
Rong Wang, Jianxing Xu, Shiyong Zhang, Ying Zhang, Penghui Zheng, Zhe Cheng, Lian Zhang, Fengxiang Chen, Xiaodong Tong, Yun Zhang, Wei Tan
Abstract
We demonstrate that low-fluence neutron irradiation can be a promising way to reduce the reverse leakage current of AlGaN/GaN heterostructures grown by MOCVD on sapphire substrates while maintaining other electronic properties almost unchanged.
Topics & Concepts
Materials scienceFluenceReverse leakage currentHeterojunctionOptoelectronicsMetalorganic vapour phase epitaxySapphireIrradiationLeakage (economics)NanotechnologyOpticsLaserEpitaxyDiodePhysicsEconomicsNuclear physicsMacroeconomicsLayer (electronics)Schottky barrierGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties