Photogating-driven enhanced responsivity in a few-layered ReSe<sub>2</sub> phototransistor
Prasanna Patil, Milinda Wasala, Rana Alkhaldi, Lincoln Weber, Kiran Kumar Kovi, Bhaswar Chakrabarti, Jawnaye Nash, Daniel Rhodes, Daniel Rosenmann, Ralu Divan, Anirudha V. Sumant, Luis Balicas, Nihar Pradhan, Saikat Talapatra
Abstract
The paper presents a thorough investigation of photoconductive properties of few layers of rhenium diselenide (ReSe 2 ). A correlation between responsivity ( R ) and power exponent ( γ ) indicates localized trap states plays a crucial role in photocurrent generation, commonly known as photogating. These trap states can be modulated by external factors such as temperature and gate voltage.
Topics & Concepts
ResponsivityPhotocurrentMaterials sciencePhotoconductivityDiselenideOptoelectronicsPhotodiodeTrap (plumbing)VoltageExponentPhotodetectorPhysicsMeteorologyLinguisticsQuantum mechanicsPhilosophySeleniumMetallurgyAdvanced Memory and Neural ComputingNanowire Synthesis and ApplicationsSemiconductor materials and interfaces