The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga<sub>2</sub>O<sub>3</sub> Nano-HEMT
G. Purnachandra Rao, Nistha Baruah, Trupti Ranjan Lenka, Rajan Singh, Nour El I. Boukortt, Hieu Pham Trung Nguyen
Abstract
In this research article, the influence of AlGaN back-barrier on the device performance has been analyzed. The study has been conducted based on the effect on the breakdown characteristics and RF performance. The inclusion of back barrier helps to raise conduction band, which diminishes the leakage path below the buffer layer and also helps to contain the 2DEG in the narrow channel. Furthermore, the RF performance is improved by mitigating the conduction losses and short channel effects. The device having the features of Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> passivation, recessed gate structure and the substrate used is β-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> . The enhancement in breakdown voltage, RF performance (f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> & f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> ) with the presence of AlGaN back barrier in proposed III-Nitride Nano-HEMT on the preferred β-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> is observed in both the cases of with & without field-plate. So, the future of HEMT technology is promising with the ongoing improvements to fulfil operational needs.