Synthesis of ZnO sol–gel thin-films CMOS-Compatible
Nizar Ben Moussa, M. Lajnef, Nessrine Jebari, Cédric Villebasse, Fabien Bayle, Julien Chaste, Ali Madouri, R. Chtourou, Étienne Herth
Abstract
-axis (002) orientation of the ZnO thin-films annealed at 400 °C were mainly influenced by the thickness of the multilayer, which is of interest for piezoelectric applications. These results demonstrate that a low-temperature method can be used to produce an eco-friendly, cost-effective ZnO sol-gel that is compatible with a complementary metal-oxide-semiconductor (CMOS) and integrated-circuits (IC).
Topics & Concepts
Materials scienceSpin coatingSol-gelThin filmAnnealing (glass)SemiconductorBand gapOptoelectronicsSiliconNanotechnologyZincChemical engineeringComposite materialMetallurgyEngineeringZnO doping and propertiesCopper-based nanomaterials and applicationsGa2O3 and related materials