Reductive pathways in molten inorganic salts enable colloidal synthesis of III-V semiconductor nanocrystals
Justin C. Ondry, Zirui Zhou, Kailai Lin, Aritrajit Gupta, Jun Hyuk Chang, Haoqi Wu, Ahhyun Jeong, Benjamin F. Hammel, Di Wang, H. Christopher Fry, Sadegh Yazdi, Gordana Duković, Richard D. Schaller, Eran Rabani, Dmitri V. Talapin
Abstract
Colloidal quantum dots, with their size-tunable optoelectronic properties and scalable synthesis, enable applications in which inexpensive high-performance semiconductors are needed. Synthesis science breakthroughs have been key to the realization of quantum dot technologies, but important group III-group V semiconductors, including colloidal gallium arsenide (GaAs), still cannot be synthesized with existing approaches. The high-temperature molten salt colloidal synthesis introduced in this work enables the preparation of previously intractable colloidal materials. We directly nucleated and grew colloidal quantum dots in molten inorganic salts by harnessing molten salt redox chemistry and using surfactant additives for nanocrystal shape control. Synthesis temperatures above 425°C are critical for realizing photoluminescent GaAs quantum dots, which emphasizes the importance of high temperatures enabled by molten salt solvents. We generalize the methodology and demonstrate nearly a dozen III-V solid-solution nanocrystal compositions that have not been previously reported.