Lightly doped In0.53Ga0.47As/InP SWIR photodetectors with diffusion barrier structure
Jiasheng Cao, Yizhen Yu, Tao Li, Chunlei Yu, Yi Gu, Bo Yang, Yingjie Ma, Xiumei Shao, L. Xue, Haimei Gong
Topics & Concepts
Materials sciencePhotodetectorDark currentOptoelectronicsDopingDiffusionScanning electron microscopeCapacitancePlanarOpticsIndium gallium arsenideGallium arsenideChemistryPhysicsComposite materialThermodynamicsPhysical chemistryElectrodeComputer scienceComputer graphics (images)Advanced Semiconductor Detectors and MaterialsSemiconductor Quantum Structures and DevicesChalcogenide Semiconductor Thin Films