Highly conductive epitaxial <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> and <i>β</i> -(Al <i> <sub>x</sub> </i> Ga <sub> 1− <i>x</i> </sub> ) <sub>2</sub> O <sub>3</sub> films by MOCVD
Fikadu Alema, Takeki Itoh, Samuel Vogt, James S. Speck, A. Osinsky
Abstract
Abstract We report on the epitaxial growth of highly conductive degenerated Ge or Si doped β -Ga 2 O 3 and β -(Al x Ga 1− x ) 2 O 3 films by MOCVD. Highly conductive homoepitaxial β -Ga 2 O 3 layers with record conductivities of 2523 and 1581 S cm −1 were realized using Si and Ge dopants. Highly conductive Si doped β -(Al x Ga 1− x ) 2 O 3 films were also grown. The incorporation of Si decreased with the increase in Al content and layer thickness. Record high conductivity of 612 S cm −1 was attained for coherently strained β -(Al 0.12 Ga 0.88 ) 2 O 3 .
Topics & Concepts
Metalorganic vapour phase epitaxyEpitaxyDopantMaterials scienceDopingElectrical conductorElectrical resistivity and conductivityAnalytical Chemistry (journal)ConductivityCrystallographyLayer (electronics)OptoelectronicsNanotechnologyChemistryPhysical chemistryComposite materialPhysicsQuantum mechanicsChromatographyGa2O3 and related materialsAdvanced Photocatalysis TechniquesZnO doping and properties