Initial stage of MBE growth of MoSe <sub>2</sub> monolayer
Yaxu Wei, Chunguang Hu, Yanning Li, Chunguang Hu, Kaihao Yu, Litao Sun, M. Hohage, Lidong Sun
Abstract
Abstract An atomically thin MoSe 2 layer has been synthesized on mica using molecular beam epitaxy (MBE). The polymorphous of the MoSe 2 layer depends on the coverage and the growth temperature. At low coverages and low growth temperature, 1T-MoSe 2 forms in addition to a comparable quantity of 2H-MoSe 2 . The metastable 1T-MoSe 2 transfers gradually to the stable 2H-MoSe 2 before the completion of the first monolayer. The current result sheds some light on the complexity of the nucleation and growth of transition metal dichalcogenide (TMDC) monolayers and implies a possible route for a phase selective synthesis using MBE.
Topics & Concepts
MonolayerMaterials scienceNucleationMolecular beam epitaxyMetastabilityLayer (electronics)MicaEpitaxyTransition metalNanotechnologyCatalysisComposite materialThermodynamicsOrganic chemistryChemistryPhysics2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications