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Design and investigation of field plate-based vertical GAA – β-(AlGa)2O3/Ga2O3 high electron mobility transistor

Ravi Ranjan, Nitesh Kashyap, Ashish Raman

2021Micro and Nanostructures16 citationsDOI

Topics & Concepts

High-electron-mobility transistorBreakdown voltageWork functionMaterials scienceTransistorOptoelectronicsElectrodePassivationVoltageLinearityField-effect transistorPower (physics)Electric fieldPower densityThreshold voltageElectrical engineeringLayer (electronics)NanotechnologyPhysicsEngineeringQuantum mechanicsGa2O3 and related materialsZnO doping and propertiesGaN-based semiconductor devices and materials
Design and investigation of field plate-based vertical GAA – β-(AlGa)2O3/Ga2O3 high electron mobility transistor | Litcius