Temperature dependent current- and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique
Ali Baltakesmez, Süleyman Tekmen, B. Güzeldir
Topics & Concepts
Materials scienceTungsten disulfideTungsten trioxideRaman spectroscopyX-ray photoelectron spectroscopyTungstenSputteringCrystallinityThin filmSemiconductorDiodeAnalytical Chemistry (journal)Layer (electronics)CapacitanceOptoelectronicsNanotechnologyChemical engineeringOpticsComposite materialMetallurgyElectrodePhysicsEngineeringPhysical chemistryChromatographyChemistrySemiconductor materials and interfaces2D Materials and ApplicationsMXene and MAX Phase Materials