Magnetic Skyrmion Transistor Gated with Voltage‐Controlled Magnetic Anisotropy
Seungmo Yang, Jong Wan Son, Tae‐Seong Ju, Minh Duc Tran, Hee‐Sung Han, Sungkyun Park, Bae Ho Park, Kyoung‐Woong Moon, Chanyong Hwang
Abstract
The paradigm shift of information carriers from charge to spin has long been awaited in modern electronics. The invention of the spin-information transistor is expected to be an essential building block for the future development of spintronics. Here, a proof-of-concept experiment of a magnetic skyrmion transistor working at room temperature, which has never been demonstrated experimentally, is introduced. With the spatially uniform control of magnetic anisotropy, the shape and topology of a skyrmion when passing the controlled area can be maintained. The findings will open a new route toward the design and realization of skyrmion-based spintronic devices in the near future.