Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb<sub>2</sub>Te<sub>3</sub>Thin Films
Martino Rimoldi, Raimondo Cecchini, Claudia Wiemer, Emanuele Longo, Stefano Cecchi, R. Mantovan, Massimo Longo
Abstract
Antimony telluride (Sb2Te3) thin films were obtained by metalorganic chemical vapor deposition (MOCVD). The films were grown on crystalline Si(100) and Al2O3(0001) and amorphous SiO2 and alpha-Al2O3 substrates. Their structural properties were compared with those of the Sb2Te3/Si(111) heterostructure. In addition to the effect of the substrate, the influence of pre- and post-growth thermal annealing is also presented. The quality of the films is discussed by comparing their morphological properties, such as roughness and granularity, and ascertaining their crystallinity and their in-plane and out-of-plane orientation.
Topics & Concepts
Metalorganic vapour phase epitaxyChemical vapor depositionMaterials scienceThin filmAmorphous solidCrystallinityCombustion chemical vapor depositionAnnealing (glass)HeterojunctionChemical engineeringAnalytical Chemistry (journal)EpitaxyCarbon filmOptoelectronicsMineralogyCrystallographyNanotechnologyChemistryComposite materialLayer (electronics)Organic chemistryEngineeringChalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenidesAdvanced Semiconductor Detectors and Materials