A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor <i>In Situ</i> SiN
Sheng Wu, Minhan Mi, Meng Zhang, Ling Yang, Bin Hou, Xiaohua Ma, Yue Hao
Abstract
The submicrometer gate HEMT is fabricated with an ultrathin-barrier (UTB) AlGaN/gallium nitride (GaN) combined with <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in situ</i> SiN passivation. The sheet resistance of the UTB Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.2</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.8</sub> N (4 nm)/GaN heterostructure is effectively reduced by the SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> passivation layer grown by metal organic chemical vapor deposition (MOCVD), from 6500 to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$312~ \Omega $ </tex-math></inline-formula> /⬜. With the 20-nm stress-engineered <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in situ</i> SiN, the device not only provides a large output current of 1.05 A/mm but also demonstrates promising potential on the RF applications, which gives AlGaN material two records high cutoff frequency <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{\text {T}}/{f} _{\text {max}}$ </tex-math></inline-formula> of 157 GHz/334 GHz for 100-nm gated device and 211 GHz/379 GHz for 70-nm gated device. During the continuous wave (CW) power measurement at 30 GHz, the 70-nm devices exhibit a large output power of 4.6 W/mm associated with a peak power-added efficiency (PAE) of 48.1% and a gain of 11.6 dB ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {ds}} =20$ </tex-math></inline-formula> V), and a high PAE of 53.8% with an output power density of 1.9 W/mm and a gain of 10.8 dB ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {ds}} =10$ </tex-math></inline-formula> V), respectively. The huge potential of the UTB-AlGaN/GaN is demonstrated for high-frequency and large-output power applications when it is combined with the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in situ</i> SiN, which is necessary for future communication systems.