Validating S‐parameter measurements of RF integrated circuits at milli‐Kelvin temperatures
Manoj Stanley, S. J. Park, S. E. de Graaf, T. Lindström, J. E. Cunningham, Nick Ridler
Abstract
Abstract Techniques to precisely characterise RF components at milli‐Kelvin temperatures support the development of quantum computing systems utilising these components. In this work, an S‐parameter measurement setup to characterise RF integrated circuits at milli‐Kelvin temperatures has been proposed and for the first time, the S‐parameter measurements at milli‐Kelvin temperatures have been validated using two independent calibration techniques, thereby providing more confidence in measurements. The techniques are demonstrated experimentally by comparing and validating calibrated S‐parameter measurements of a cryogenic attenuator integrated circuits at milli‐Kelvin temperatures.