Monolithic InSb nanostructure photodetectors on Si using rapid melt growth
Heera Menon, Hossein Jeddi, Nicholas Morgan, Anna Fontcuberta i Morral, Håkan Pettersson, Mattias Borg
Abstract
at 16 nW illumination, with a time constant in the range of milliseconds. Electron backscatter diffraction spectroscopy revealed that the single crystalline InSb nanostructures contain occasional twin defects and crystal lattice twist around the growth axis, in addition to residual strain, possibly causing the observation of a low-energy tail in the detector response extending the photosensitivity out to 10 μm wavelengths (0.12 eV) at 77 K.
Topics & Concepts
NanostructurePhotodetectorMaterials scienceOptoelectronicsNanotechnologyNanowire Synthesis and ApplicationsPhotonic and Optical DevicesSemiconductor Quantum Structures and Devices