Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4H-SiC)
Neeraj Neeraj, Shobha Sharma, Anubha Goel, Sonam Rewari, R.S. Gupta
Topics & Concepts
Materials scienceTransconductanceNanowireOptoelectronicsIntermodulationSubthreshold slopeLinearityField-effect transistorTransistorElectrical engineeringVoltageCMOSEngineeringAmplifierAdvancements in Semiconductor Devices and Circuit DesignSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices