Technology progress on quantum dot light-emitting diodes for next-generation displays
Sang Yun Bang, Yo‐Han Suh, Xiang‐Bing Fan, Dong‐Wook Shin, Sanghyo Lee, Hyung Woo Choi, Tae Hoon Lee, Jiajie Yang, Shijie Zhan, William Harden-Chaters, Chatura Samarakoon, Luigi G. Occhipinti, Soo Deok Han, Sung‐Min Jung, Jong Min Kim
Abstract
Quantum dot light-emitting diodes (QD-LEDs) are widely recognised as great alternatives to organic light-emitting diodes (OLEDs) due to their enhanced performances. This focus article surveys the current progress on the state-of-the-art QD-LED technology including material synthesis, device optimization and innovative fabrication processes. A discussion on the material synthesis of core nanocrystals, shell layers and surface-binding ligands is presented for high photoluminescence quantum yield (PLQY) quantum dots (QDs) using heavy-metal free materials. The operational principles of several types of QD-LED device architectures are also covered, and the recent evolution of device engineering technologies is investigated. By exploring the fabrication process for pixel-patterning of QD-LEDs on an active-matrix backplane for full-colour display applications, we anticipate further improvement in device performance for the commercialisation of next-generation displays.