Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides
Minhyung Ahn, Yongmo Park, Seung Hwan Lee, Sieun Chae, Jihang Lee, John T. Heron, Emmanouil Kioupakis, Wei Lü, Jamie Phillips
Abstract
Abstract Memristors have emerged as transformative devices to enable neuromorphic and in‐memory computing, where success requires the identification and development of materials that can overcome challenges in retention and device variability. Here, high‐entropy oxide composed of Zr, Hf, Nb, Ta, Mo, and W oxides is first demonstrated as a switching material for valence change memory. This multielement oxide material provides uniform distribution and higher concentration of oxygen vacancies, limiting the stochastic behavior in resistive switching. (Zr, Hf, Nb, Ta, Mo, W) high‐entropy‐oxide‐based memristors manifest the “cocktail effect,” exhibiting comparable retention with HfO 2 ‐ or Ta 2 O 5 ‐based memristors while also demonstrating the gradual conductance modulation observed in WO 3 ‐based memristors. The electrical characterization of these high‐entropy‐oxide‐based memristors demonstrates forming‐free operation, low device and cycle variability, gradual conductance modulation, 6‐bit operation, and long retention which are promising for neuromorphic applications.