Robust Compact Model of High-Voltage MOSFET’s Drift Region
Girish Pahwa, Ayushi Sharma, Ravi Goel, Garima Gill, Harshit Agarwal, Yogesh Singh Chauhan, Chenming Hu
Abstract
This brief presents a compact model to capture the major difference between high-voltage (HV) and low-voltage MOSFETs, i.e., the carrier velocity saturation effect in the drift region of HV MOSFETs. We discuss the numerical and behavioral issues that can arise in SPICE simulations with the existing current-dependent formulation in Berkeley-Short-Channel-IGFET model (BSIM) for HV transistors. We then demonstrate how a voltage-dependent formulation can mitigate them without losing simplicity and accuracy. We also validate the proposed model against experimental data of HV transistors.
Topics & Concepts
MOSFETVelocity saturationTransistorSpiceThreshold voltageChannel length modulationVoltageHigh voltageElectronic engineeringPhysicsOptoelectronicsElectrical engineeringMaterials scienceComputer scienceEngineeringSilicon Carbide Semiconductor TechnologiesAdvancements in Semiconductor Devices and Circuit DesignElectrostatic Discharge in Electronics