Tuning the Mechanical Properties of a Polymer Semiconductor by Modulating Hydrogen Bonding Interactions
Yu Zheng, Minoru Ashizawa, Song Zhang, Jiheong Kang, Shayla Nikzad, Zhiao Yu, Yuto Ochiai, Hung‐Chin Wu, Helen Tran, Jaewan Mun, Yu‐Qing Zheng, Jeffrey B.‐H. Tok, Xiaodan Gu, Zhenan Bao
Abstract
Conjugation breakers (CBs) with different H-bonding chemistries and linker flexibilities are designed and incorporated into a diketopyrrolopyrrole (DPP)-based conjugated polymer backbone. The effects of H-bonding interactions on polymer semiconductor morphology, mechanical properties, and electrical performance are systematically investigated. We observe that CBs with an H-bonding self-association constant >0.7 or a denser packing tendency are able to induce higher polymer chain aggregation and crystallinity in as-casted thin films, resulting in a higher modulus and crack on-set strain. Additionally, the rDoC (relative degree of crystallinity) of the stretched thin film with the highest crack on-set strain only suffers a small decrease, suggesting the main energy dissipation mechanism is the breakage of H-bonding interactions. By contrast, other less stretchable polymer films dissipate strain energy through the breakage of crystalline domains, indicated by a drastic decrease in rDoC. Furthermore, we evaluate their electrical performances under mechanical strain in fully stretchable field-effect transistors. The polymer with the highest crack on-set strain has the least degradation in mobility as a function of strain. Overall, these observations suggest that we can aptly tune the mechanical properties of a polymer semiconductor by modulating intermolecular interactions, such as H-bonding chemistry and linker flexibility. Such understanding provides molecular design guidelines for future stretchable semiconductors.