Analysis of formation mechanism of deposited film in a high-aspect-ratio hole during dry etching using fluorocarbon gas plasmas
Noboru Hiwasa, Junji Kataoka, Norikatsu Sasao, Shuichi Kuboi, Daiki Iino, Kazuaki Kurihara, Hiroyuki Fukumizu
Abstract
Abstract In the dry etching process using fluorocarbon (FC) gas, deposited amorphous-CF x (a-CF x ) films in patterns, such as holes and trenches, strongly affect the etching performance. The influence of the FC gas molecular structures and their atomic compositions on the formation of a-CF x films at different positions in the holes were investigated. It was found that the deposition region and thickness of the a-CF x film strongly depend on the molecular structures of the FC gas, such as double bonds, benzene rings, and the atomic ratio of fluorine to carbon.
Topics & Concepts
FluorocarbonEtching (microfabrication)FluorineDry etchingBenzeneCarbon fibersDeposition (geology)PlasmaAmorphous solidMaterials sciencePlasma etchingAmorphous carbonAnalytical Chemistry (journal)Chemical engineeringChemistryNanotechnologyCrystallographyComposite materialOrganic chemistryMetallurgyPaleontologyEngineeringBiologySedimentLayer (electronics)Quantum mechanicsPhysicsComposite numberPlasma Diagnostics and ApplicationsCopper Interconnects and ReliabilityZnO doping and properties