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Low resistance-drift characteristics in Cr2Ge2Te6-based phase change memory devices with a high-resistance crystalline phase

Shogo Hatayama, Yun‐Heub Song, Yuji Sutou

2021Materials Science in Semiconductor Processing16 citationsDOI

Topics & Concepts

Materials scienceThermal conductionAmorphous solidPhase-change memoryPhase (matter)Condensed matter physicsOptoelectronicsComposite materialCrystallographyChemistryPhysicsOrganic chemistryLayer (electronics)Phase-change materials and chalcogenidesAdvanced Memory and Neural ComputingTransition Metal Oxide Nanomaterials
Low resistance-drift characteristics in Cr2Ge2Te6-based phase change memory devices with a high-resistance crystalline phase | Litcius