Tunable Feshbach Resonances and Their Spectral Signatures in Bilayer Semiconductors
Clemens Kuhlenkamp, Michael Knap, M. Wagner, Richard Schmidt, Ataç İmamoğlu
Abstract
Feshbach resonances provide an invaluable tool in atomic physics, enabling precise control of interactions and the preparation of complex quantum phases of matter. Here, we theoretically analyze a solid-state analog of a Feshbach resonance in two dimensional semiconductor heterostructures. In the presence of interlayer electron tunneling, the scattering of excitons and electrons occupying different layers can be resonantly enhanced by tuning an applied electric field. The emergence of an interlayer Feshbach molecule modifies the optical excitation spectrum, and can be understood in terms of Fermi polaron formation. We discuss potential implications for the realization of correlated Bose-Fermi mixtures in bilayer semiconductors.