Mitigating Inter-Chip Oscillation of paralleled SiC MOSFETs
Florian Sawallich, Hans-Günter Eckel
Abstract
In certain parasitic conditions, self-excited oscillation of paralleled SiC MOSFETs can occur. This kind of oscillation is known as inter-chip oscillation and can lead to loss of control, resulting in device breakdown, decreased lifetime, or significantly higher EMI. This paper reveals the mechanism of inter-chip oscillation and presents effective methods for mitigation.
Topics & Concepts
Oscillation (cell signaling)EMIChipMaterials scienceOptoelectronicsExcited stateElectronic engineeringElectrical engineeringElectromagnetic interferencePhysicsEngineeringChemistryAtomic physicsBiochemistrySilicon Carbide Semiconductor TechnologiesElectromagnetic Compatibility and Noise SuppressionElectrostatic Discharge in Electronics