Influence of atomic incident kinetic energy on crystalline quality of epitaxial GaN thin films: A molecular dynamics study
Rui Li, Gai Wu, Kang Liang, Lianghao Xue, Shizhao Wang, Sheng Liu
Topics & Concepts
Materials scienceEpitaxyNucleationDislocationThin filmKinetic energyAtomic unitsOptoelectronicsMolecular dynamicsSurface energyStress (linguistics)Chemical physicsCrystallographyNanotechnologyComposite materialComputational chemistryThermodynamicsChemistryLayer (electronics)PhysicsLinguisticsQuantum mechanicsPhilosophyGaN-based semiconductor devices and materialsZnO doping and propertiesMetal and Thin Film Mechanics