Drain current sensitivity analysis using a surface potential-based analytical model for AlGaN/GaN double gate MOS-HEMT
P. Sriramani, N. Mohankumar, Y. Prasamsha
Topics & Concepts
Sensitivity (control systems)TransconductanceHigh-electron-mobility transistorMaterials scienceOptoelectronicsTransistorCurrent (fluid)ConductanceGallium nitrideLayer (electronics)NanotechnologyElectronic engineeringElectrical engineeringPhysicsVoltageEngineeringCondensed matter physicsGaN-based semiconductor devices and materialsSemiconductor materials and devicesMolecular Junctions and Nanostructures