Synthesis and characterisation of Ga- and In-doped CdS by solventless thermolysis of single source precursors
Suliman A. Alderhami, Ruben Ahumada‐Lazo, Mark A. Buckingham, David J. Binks, Paul O’Brien, David Collison, David J. Lewis
Abstract
materials were examined by UV-Vis absorption and photoluminescence spectroscopies respectively. All materials were found to exhibit excitonic emission, corresponding to band gap energies between 2.7 and 2.9 eV and surface defect induced emission which is more prominent for Ga than for In doping. Additionally, moderate doping slows down charge carrier recombination by increasing the lifetimes of excitonic and surface state emissions, but particularly for the latter process.
Topics & Concepts
PhotoluminescenceDopingThermal decompositionExcitonMaterials scienceRecombinationPhase (matter)Charge carrierSpectroscopyDecompositionChemical engineeringPhotochemistryChemistryOptoelectronicsOrganic chemistryCondensed matter physicsEngineeringBiochemistryGeneQuantum mechanicsPhysicsQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin FilmsMolecular Junctions and Nanostructures