Improved rectification characteristics by engineering energy barrier height in TiOx-based RRAM
Tae‐Hyeon Kim, Sungjun Kim, Byung‐Gook Park
Topics & Concepts
RectificationResistive random-access memoryOptoelectronicsMaterials sciencePolarity (international relations)Resistive touchscreenBand diagramEnergy (signal processing)ElectrodeNanotechnologyVoltageComputer scienceElectrical engineeringBand gapChemistryPhysicsEngineeringPhysical chemistryBiochemistryQuantum mechanicsCellAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering