Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
Hirokazu Fujiwara, Yuta Sato, Nobuyoshi Saito, Tomomasa Ueda, Keiji Ikeda
Abstract
We have demonstrated, for the first time, a surrounding gate vertical-channel field-effect transistor (FET) with a gate length of 40 nm by introducing back-end-of-line (BEOL) process-compatible oxide semiconductor (OS) In-Al-Zn-O as a channel material. Fabricated FETs exhibited high scalability by excellent thermal stability (~420 °C) compared to conventional In-Ga-Zn-O-channel FETs, with high-mobility (12.7 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V.s) characteristics. Furthermore, the vertical-channel FET also exhibited excellent reliability and stable operation without floating body effect. Endurance of over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> cycles was also demonstrated. Our work opens a pathway to realization of high-performance BEOL transistor for 3-D-large-scale integration (LSI) applications.