Comprehensive Investigation of Negative Capacitance and Inductive Behavior in Pure and 3% and 5% Ni-Doped PVP-Based Au/n-Si (MS) Schottky Diodes (SDs)
Ahmed Abidinov, İ.M. Afandiyeva, E.R. Bakhtiyarli, Seçkin Altındal Yerişkin, Sabreen A. Hameed
Abstract
High Resolution Image Download MS PowerPoint Slide In this research, the main electrical properties and influence of surface states ( N ss ) on the performance of Au/n-Si (MS) Schottky diodes (SDs) with and without pure and 3% and 5% Ni-doped PVP through capacitance–voltage ( C – V ) and conductance–voltage ( G /ω– V ) measurements within the voltage range of −3.5 V/3.5 V have been investigated. The basic electrical parameters extracted from the C –2 – V plots and Hill–Coleman analysis, providing insight into the doping concentration ( N d ), depletion layer width ( W d ), barrier height (Φ B ), built-in potential ( V bi ), and maximum electric field ( E max ) for each configuration, are included in this article. For all prepared samples, the C – V curves exhibit a clear peak at around 0.8 V, followed by a sharp decline into negative values beyond 2 V, while the G /ω– V characteristics show a rapid increase within this voltage range. To explain this behavior, both C and G /ω were simultaneously plotted as functions of voltage and current. Furthermore, the N ss and the series-resistance ( R s ) were analyzed to understand their influences on the device’s electrical parameters, especially focusing on the negative capacitance (NC), anomalous-peak behavior, and inductive-like response observed at the accumulation region. In addition, the corrections of C m and G m /ω were investigated to understand the effect of R s and interfacial polarization on the electrical properties of pure and Ni-doped PVP samples, where the anomalous peak and NC were greatly enhanced.