Ge1−Sn layers with x∼0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping
Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka
Topics & Concepts
Materials scienceMolecular beam epitaxyDopingSubstrate (aquarium)In situEpitaxyOptoelectronicsAnalytical Chemistry (journal)NanotechnologyLayer (electronics)ChemistryBiologyOrganic chemistryEcologyChromatographyPhotonic and Optical DevicesSemiconductor Lasers and Optical DevicesSemiconductor Quantum Structures and Devices