Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> Stacking Heterostructure
Guojing Hu, Yuanmin Zhu, Junxiang Xiang, Tzu‐Yi Yang, Meng Huang, Zhe Wang, Zhi Wang, Ping Liu, Ying Zhang, Chao Feng, Dazhi Hou, Wenguang Zhu, Meng Gu, Chia-Hsiu Hsu, Feng‐Chuan Chuang, Yalin Lu, Bin Xiang, Yu‐Lun Chueh
Abstract
The presence of two-dimensional (2D) layer-stacking heterostructures that can efficiently tune the interface properties by stacking desirable materials provides a platform to investigate some physical phenomena, such as the proximity effect and magnetic exchange coupling. Here, we report the observation of antisymmetric magnetoresistance in a van der Waals (vdW) antiferromagnetic/ferromagnetic (AFM/FM) heterostructure of MnPS3/Fe3GeTe2 when the temperature is below the Neel temperature of MnPS3. Distinguished from two resistance states in conventional giant magnetoresistance, the magnetoresistance in the MnPS3/Fe3GeTe2 heterostructure exhibits three states, of high, intermediate, and low resistance. This antisymmetric magnetoresistance spike is determined by an unsynchronized magnetic switching between the AFM/FM interface layer and the bulk of Fe3GeTe2 during magnetization reversal. Our work highlights that the artificial vdW stacking structure holds potential to explore some physical phenomena and spintronic device applications.