Highly Robust Flexible Poly-Si Thin Film Transistor Under Mechanical Strain With Split Active Layer for Foldable Active Matrix Organic Light Emitting Diode Display
Sadia Sayed Urmi, Mohammad Masum Billah, Sunaina Priyadarshi, Jinbaek Bae, Byunglib Jung, Suhui Lee, Keun-Woo Kim, Jiyeong Shin, Sangun Choi, Jun Hyung Lim, Taewook Kang, Changhee Lee, Jin Jang
Abstract
We report a novel active split structure of low-temperature polysilicon (LTPS) thin film transistor (TFT) on polyimide (PI) substrate showing robust electrical performance under mechanical strain. The compressive and tensile bending tests were carried out with cylinders of radii 3, 2 and 1 mm respectively. The active split TFT exhibits much more stable electrical performance than the conventional TFT. The conventional LTPS TFT shows electrical failure due to the crack generation during tensile or compressive bending test carried out with 1 mm radius cylinder. The split poly-Si islands could resist crack formation/propagation, resulting in a robust electrical performance.