The Development of Frequency Multipliers for Terahertz Remote Sensing System
Yong Zhang, Chengkai Wu, Xiaoyu Liu, Li Wang, Chunyue Dai, Jianhang Cui, Yukun Li, Nicholas Kinar
Abstract
This paper summarizes the development of novel Schottky-diode-based terahertz frequency multipliers. The basic structure and manufacturing process of planar Schottky barrier diodes (SBDs) are reviewed, along with other diode structures that have been proposed in the literature. A numerical modeling method for the novel diodes in the context of terahertz frequency multipliers is presented, which includes 3D electromagnetic (EM) modeling, electro-thermal modeling and modeling of physical non-ideal effects. Furthermore, a general design methodology for developing terahertz frequency multipliers is introduced, involving a sub-division design method (SDM), a global design method (GDM) and a half-sub-division and half-global design method (HS-HGDM). These methods are summarized and compared for 110 GHz and 220 GHz frequency multipliers in the context of communication and imaging applications. Laboratory measurements of these multipliers show good agreement with numerical simulations. Finally, several classic terahertz remote sensing systems are reviewed, and a 220 GHz remote sensing system established using novel frequency multipliers for security inspection purposes is presented along with associated imaging results.