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Design of high stability, low power and high speed 12 T SRAM cell in 32-nm CNTFET technology

E. Mani, Erfan Abbasian, Muthukumaran Gunasegeran, Sobhan Sofimowloodi

2022AEU - International Journal of Electronics and Communications52 citationsDOI

Topics & Concepts

Static random-access memoryCarbon nanotube field-effect transistorTransistorAccess timeComputer scienceElectronic engineeringEngineeringComputer hardwareElectrical engineeringField-effect transistorVoltageLow-power high-performance VLSI designAdvancements in Semiconductor Devices and Circuit DesignRadiation Effects in Electronics
Design of high stability, low power and high speed 12 T SRAM cell in 32-nm CNTFET technology | Litcius