Influence of Temperature on Atmospheric Neutron-Induced SEB Failure Rate for SiC MOSFETs
Chao Peng, Zhifeng Lei, Zhangang Zhang, Yujuan He, Teng Ma, Zongqi Cai, Yiqiang Chen
Abstract
The neutron-induced single event burnout (SEB) failure is investigated for SiC metal–oxide semiconductor field-effect transistor (MOSFET) by conducting spallation neutron irradiation at different temperatures in the range of −25 °C~125 °C. The SEB failure rates of SiC MOSFETs at different temperatures and voltages are calculated based on the accelerated experimental results. It shows that the failure rates increase exponentially with drain bias voltages and decrease exponentially with temperatures. An empirical formula of failure rate as a function of voltage and temperature is established for the 900 V SiC MOSFET. The influence of temperature on SEB effect is also studied by technology computer aided design (TCAD) simulations.