Lateral charge migration induced abnormal read disturb in 3D charge-trapping NAND flash memory
Fei Wang, Rui Cao, Yachen Kong, Xiaolei Ma, Xuepeng Zhan, Yuan Li, Jiezhi Chen
Abstract
Abnormal read disturb (RD) has been investigated in three-dimensional (3D) charge-trapping NAND flash memory. Similar to traditional 2D NAND, RD will cause more error bits right after programming. However, after short-time retention, it has weak effects on error bits; more importantly, after long-time retention, a part of error bits can be recovered. With special coding designs in chip characterizations and TCAD simulations, it is concluded that lateral charge migration could be dominant mechanism for abnormal RD, which can be utilized to prolong lifetime of 3D NAND-based memory system for cold storage applications.
Topics & Concepts
NAND gateTrappingCharge (physics)Flash (photography)Computer scienceFlash memoryData retentionCoding (social sciences)ChipOptoelectronicsComputer hardwareLogic gateMaterials scienceAlgorithmPhysicsOpticsMathematicsQuantum mechanicsTelecommunicationsBiologyStatisticsEcologySemiconductor materials and devicesAdvanced Data Storage TechnologiesAdvancements in Semiconductor Devices and Circuit Design