Continuous-wave electrically injected GaN-on-Si microdisk laser diodes
Jin Wang, Meixin Feng, Rui Zhou, Qian Sun, Jianxun Liu, Xiujian Sun, Xinhe Zheng, Masao Ikeda, Xing Sheng, Hui Yang
Abstract
Silicon photonics has been calling for an electrically pumped on-chip light source at room temperature for decades. A GaN-based microdisk laser diode with whispering gallery modes grown on Si is a promising candidate for compact on-chip light source. By suppressing the unintentional incorporation of carbon impurity in the p-type AlGaN cladding layer of the laser, we have significantly reduced the operation voltage and threshold current of the GaN-on-Si microdisk laser. Meanwhile the radius of the microdisk laser was shrunk to 8 µm to lower the thermal power. The overall junction temperature of the microdisk laser was effectively reduced. As a result, the first continuous-wave electrically pumped InGaN-based microdisk laser grown on Si was achieved at room temperature.