Enhanced piezoelectric properties and domain morphology under alternating current electric field poled in [001]-oriented PIN-PMN-PT single crystal
Kexin Song, Ming Ma, Qingyuan Hu, Liao Qiao, Jinyan Zhao, Chaorui Qiu, Jinfeng Liu, Peng Luan, Haisheng Guo, Fei Li, Zhenrong Li, Shiji Fan, Zhuo Xu
Abstract
The piezoelectric and dielectric properties of PMN-PT single crystals were significantly enhanced by alternating current electric field poling (ACP). In this work, to investigate the mechanisms of piezoelectric performance enhancement in relaxor ferroelectric single crystals by ACP, a [001]-oriented PIN-PMN-PT single crystal with a diameter of 3 in was grown by the modified Bridgman method, and a series of single crystal samples within 100 mm of the height of the crystal boule were prepared. Compared with their direct current electric field poling (DCP) counterparts, the electrical properties of single crystal samples at different heights by ACP were regularly enhanced. The piezoelectric coefficient d33 and the dielectric constant ɛ33 of the rhombohedral samples both increased by nearly 20%. Based on the results of polarized light microscopy, the domain wall in [001]-poled ACP samples could not be observed along the [001] direction. The brightness of polarized light propagating along the [010] orientation was enhanced after ACP. The domain images of {100} in the DCP and ACP samples were observed by piezoelectric force microscopy. The results showed that the domain size of ACP samples increased. The existence of layered domains can be clearly found in the scanning electron microscopy results of the stress fracture surface of the ACP sample. According to the analysis, the improvement of the piezoelectric performance in ACP samples comes from the elimination of the 71° domain walls. This work demonstrates that certain ACPs can regulate the domain structure and steadily improve the piezoelectric properties of R-phase PIN-PMN-PT single crystals.