High‐Performance Ultraviolet‐Visible Light‐Sensitive 2D‐MoS <sub>2</sub> /1D‐ZnO Heterostructure Photodetectors
Jian Zhang, Yiting Liu, Xinglai Zhang, Zongyi Ma, Jing Li, Cai Zhang, Altynay Shaikenova, Beisenov Renat, Baodan Liu
Abstract
Abstract Two‐dimensional (2D) transition‐metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS 2 ) have recently attracted extensive interest for building future optoelectronic devices. However, the limited light absorption, low photoresponsivity and slow response speed in visible range inhibit their further application. Here, we proposed a promising approach to realize the high‐performance photodetectors (PDs) by constructing 2D‐MoS 2 flake/1D‐ZnO nanowire mixed‐dimensional heterostructures. The integration of 1D‐ZnO on p‐type or n‐type MoS 2 to form the mixed‐dimensional 2D‐MoS 2 /1D‐ZnO heterostructure PDs not only broadens the light response range, but also improves the photoresponsivity and response time of 2D‐MoS 2 flakes. Under the 365 nm light illumination, the photoresponsivity, external quantum efficiency and response time of p‐MoS 2 /n‐ZnO PDs are as high as 24.36 A/W, 8.28×10 3 % and 0.9 s, respectively. Under 532 nm light illumination, the photoresponsivity, external quantum efficiency and response time are estimated to be 0.35 A/W, 80.9 % and 140 ms, respectively. These properties are superior or comparable to the performance of other reported 2D‐MoS 2 flake PDs. This work provides a possible strategy for the realization of high‐performance optoelectronic devices by the integration of 2D‐MoS 2 and 1D‐ZnO to form mixed‐dimensional heterostructures.