Single‐Crystal MoS<sub>2</sub> Monolayer Wafer Grown on Au (111) Film Substrates
Jing Li, Shuang Wang, Qi Jiang, Haoji Qian, Shike Hu, Kang He, Chen Chen, Xiaoyi Zhan, Aobo Yu, Sunwen Zhao, Yanhui Zhang, Zhiying Chen, Yanping Sui, Shan Qiao, Guanghui Yu, Songang Peng, Zhi Jin, Xinyu Liu
Abstract
Abstract Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next‐generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS 2 (SC‐MoS 2 ) monolayer is reported on Au (111) film across a two‐inch c‐plane sapphire wafer by CVD. The MoS 2 domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS 2 domains on Au (111) is a temperature‐guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS 2 seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS 2 domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.