Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates
Yuanhao Sun, Fujun Xu, Na Zhang, Jing Lang, Jiaming Wang, Baiyin Liu, Liubing Wang, Nan Xie, Xuzhou Fang, Xiangning Kang, Zhixin Qin, Xuelin Yang, Xinqiang Wang, Weikun Ge, Bo Shen
Abstract
Growth of AlGaN-based multiple quantum wells (MQWs) with an IQE > 80% at room temperature has been realized on nano-patterned sapphire substrates. A DUV-LED device is then fabricated taking such high IQE MQWs as the active region.
Topics & Concepts
SapphireRealization (probability)Materials scienceOptoelectronicsNano-Quantum efficiencyQuantum wellQuantumNanotechnologyOpticsLaserPhysicsComposite materialStatisticsQuantum mechanicsMathematicsGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesZnO doping and properties